STD25NF20 Datasheet, PDF (4/16 Pages) STMicroelectronics – Exceptional dv/dt capability

Electrical characteristics
2
Electrical characteristics
(T_C = 25 °C unless otherwise specified)
Symbol
Parameter
Table 5. Static
Test conditions
V_(BR)DSS
Drain-source
breakdown voltage
I_D = 1 mA, V_GS = 0
I_DSS
I_GSS
V_GS(th)
R_DS(on)
Zero gate voltage
V_DS = 200 V
drain current (V_GS = 0) _{VDS = 200 V, TC=125 °C}
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
Gate threshold voltage V_DS = V_GS, I_D = 250 µA
Static drain-source
on-resistance
V_GS = 10 V, I_D = 10 A
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6. Dynamic
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 160 V, I_D = 20 A,
V_GS = 10 V
(see Figure 13)
STD25NF20
Min. Typ. Max. Unit
200
V
1 µA
50 µA
±100 nA
2
3
4
V
0.10 0.125 Ω
Min.
-
-
Typ.
940
197
Max. Unit
pF
pF
-
30
pF
-
28
39 nC
-
5.6
nC
-
14.5
nC
Symbol
Parameter
t_d(on)
t_r(v)
t_d(off)
t_f(i)
Turn-on delay time
Voltage rise time
Turn-off-delay time
Fall time
Table 7. Switching times
Test conditions
Min. Typ. Max. Unit
-
15
- ns
V_DD = 100 V, I_D = 10 A,
-
30
- ns
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 14 and Figure 17)
-
40
-
ns
-
10
- ns
4/16
DocID024372 Rev 3