STD25NF20 Datasheet, PDF (3/16 Pages) STMicroelectronics – Exceptional dv/dt capability

STD25NF20
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D
I_DM(1)
P_TOT
dv/dt⁽²⁾
Drain-source voltage
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Peak diode recovery voltage slope
T_stg
Storage temperature
T_j
Operating junction temperature
1. Pulse width limited by safe operating area.
2. I_SD ≤ 18 A, di/dt ≤ 200 A/µs; V_{DS peak} < V_(BR)DSS, V_DD = 80% V_(BR)DSS.
Value
200
±20
18
11
72
110
15
-55 to 175
Table 3. Thermal data
Symbol
Parameter
R_thj-case
Thermal resistance junction-case
R_thj-pcb
Thermal resistance junction-pcb
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
1.38
50⁽¹⁾
Symbol
I_AR
E_AS
Table 4. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse
width limited by T_jmax )
Single pulse avalanche energy (starting T_j=25°C,
I_D= I_AR; V_DD=50 V)
Value
18
110
Unit
V
A
A
W
V/ns
°C
Unit
°C/W
Unit
A
mJ
DocID024372 Rev 3
3/16
16