STD150N3LLH6 Datasheet, PDF (4/16 Pages) STMicroelectronics – N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220

Electrical characteristics
STD150N3LLH6, STP150N3LLH6, STU150N3LLH6
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified)
Table 4.
Symbol
Static
Parameter
V_(BR)DSS
Drain-source breakdown
Voltage
I_DSS
I_GSS
V_GS(th)
Zero gate voltage drain
current (V_GS = 0)
Gate body leakage current
(V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
I_D = 250 µA, V_GS= 0
V_DS = 30 V
V_DS = 30 V,Tc = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
SMD version
V_GS = 10 V, I_D = 40 A
V_GS = 4.5 V, I_D = 40 A
SMD version
V_GS = 4.5 V, I_D = 40 A
Min. Typ. Max. Unit
30
V
1 µA
10 µA
±100 nA
1
2.5 V
0.0024 0.0028 Ω
0.0029 0.0033 Ω
0.0034 0.0045 Ω
0.0039 0.0049 Ω
Table 5. Dynamic
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
Test conditions
V_DS = 25 V, f=1 MHz,
V_GS = 0
V_DD = 15 V, I_D = 80 A
V_GS = 4.5 V
(see Figure 14)
f = 1 MHz gate bias
Bias = 0 test signal
level = 20 mV
open drain
Min Typ. Max. Unit
4040
pF
-
740
- pF
425
pF
40
nC
-
16.3
- nC
15.8
nC
-
1.4
-
Ω
4/16
Doc ID 15227 Rev 3