STD150N3LLH6 Datasheet, PDF (1/16 Pages) STMicroelectronics – N-channel 30 V, 0.0024 ohm , 80 A, DPAK, IPAK, TO-220

STD150N3LLH6
STP150N3LLH6, STU150N3LLH6
N-channel 30 V, 0.0024 Ω , 80 A, DPAK, IPAK, TO-220
STripFET™ VI DeepGATE™ Power MOSFET
Features
Type
STD150N3LLH6
STP150N3LLH6
STu150N3LLH6
V_DSS
30 V
30 V
30 V
R_DS(on) max
0.0028 Ω
0.0033 Ω
0.0033 Ω
I_D
80 A
80 A
80 A
■ R_DS(on) * Q_g industry benchmark
■ Extremely low on-resistance R_DS(on)
■ High avalanche ruggedness
■ Low gate drive power losses
Application
■ Switching applications
Description
This product utilizes the 6th generation of design
rules of ST’s proprietary STripFET™ technology,
with a new gate structure.The resulting Power
MOSFET exhibits the lowest R_DS(on) in all
packages.
3
1
DPAK
3
2
1
IPAK
3
2
1
TO-220
Figure 1. Internal schematic diagram
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Table 1. Device summary
Order codes
STD150N3LLH6
STP150N3LLH6
STU150N3LLH6
Marking
150N3LLH6
150N3LLH6
150N3LLH6
3
!-V
Package
DPAK
TO-220
IPAK
Packaging
Tape and reel
Tube
Tube
September 2009
Doc ID 15227 Rev 3
1/16
www.st.com
16