STD11N60DM2 Datasheet, PDF (4/15 Pages) STMicroelectronics – N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

Electrical characteristics
STD11N60DM2
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source
breakdown voltage
VGS = 0 V, ID = 1 mA
IDSS
Zero gate voltage
drain current
VGS = 0 V, VDS = 600 V
VGS = 0 V, VDS = 600 V,
Tcase = 125 °C⁽¹⁾
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
Gate threshold
voltage
VDS = VGS, ID = 250 µA
RDS(on)
Static drain-source
on-resistance
VGS = 10 V, ID = 5 A
Min. Typ. Max. Unit
600
V
1.5
µA
100
±10 µA
3
4
5
V
0.370 0.420 Ω
Notes:
(1)_{Defined by design, not subject to production test.}
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate
resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
Min. Typ. Max. Unit
- 614 -
-
32
-
pF
- 1.08 -
VDS = 0 to 480 V, VGS = 0 V
-
57
-
pF
f = 1 MHz, ID = 0 A
- 6.2 -
Ω
VDD = 480 V, ID = 10 A,
- 16.5 -
VGS = 10 V (see Figure 15: "Test - 3.8 - nC
circuit for gate charge behavior") _-
9.2
-
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
td(on)
tr
td(off)
tf
Parameter
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Table 7: Switching times
Test conditions
Min. Typ. Max. Unit
VDD = 300 V, ID = 5 A RG = 4.7 Ω, ^{- 11.7 -}
VGS = 10 V (see Figure 14: "Test
-
6.3
-
circuit for resistive load switching
ns
times" and Figure 19: "Switching
-
31
-
time waveform")
- 9.5 -
4/15
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