STD11N60DM2 Datasheet, PDF (3/15 Pages) STMicroelectronics – N-channel 600 V, 0.370 (ohm) typ., 10 A MDmesh DM2 Power MOSFET in a DPAK package

STD11N60DM2
1
Electrical ratings
Symbol
Table 2: Absolute maximum ratings
Parameter
VGS
ID
IDM⁽¹⁾
PTOT
dv/dt⁽²⁾
dv/dt⁽³⁾
Tstg
Tj
Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
Drain current (continuous) at Tcase = 100 °C
Drain current (pulsed)
Total dissipation at Tcase = 25 °C
Peak diode recovery voltage slope
MOSFET dv/dt ruggedness
Storage temperature range
Operating junction temperature range
Notes:
(1) _{Pulse width is limited by safe operating area.}
(2) _{ISD ≤ 10 A, di/dt=900 A/μs; VDS peak < V(BR)DSS,VDD = 400 V}
(3) _{VDS ≤ 480 V.}
Symbol
Rthj-case
Rthj-pcb⁽¹⁾
Table 3: Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Notes:
(1)_{When mounted on 1 inch² FR-4 board, 2oz Cu.}
Symbol
IAR⁽¹⁾
EAS⁽²⁾
Table 4: Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
Single pulse avalanche energy
Notes:
(1) _{pulse width limited by Tjmax}
(2) _{starting Tj = 25 °C, ID = IAR, VDD = 50 V.}
Electrical ratings
Value
±25
10
6.3
40
110
40
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
1.14
50
Unit
°C/W
Value
Unit
2.5
A
250
mJ
DocID029387 Rev 1
3/15