STD10NM65N_08 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

Electrical characteristics
STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
2
Electrical characteristics
(T_CASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
Drain-source
V_{(BR)DSS breakdown voltage}
I_D = 1 mA, V_GS = 0
650
dv/dt ⁽¹⁾ Drain source voltage slope ^{VDD= 520 V, ID= 9 A,}
V_GS= 10 V
Zero gate voltage
I_{DSS drain current (VGS = 0)}
V_DS = max rating
V_DS = max rating, @125 °C
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
V_GS(th) Gate threshold voltage
V_DS = V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS = 10 V, I_D = 4.5 A
1. Characteristics value at turn off on inductive load
V
25
V/ns
1 µA
100 µA
±100 nA
3
4
V
0.43 0.48 Ω
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS=15 V_, I_D = 4.5 A
V_DS = 50 V, f = 1 MHz,
V_GS = 0
7.5
S
pF
850
pF
53
pF
4
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 520 V
90
pF
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 520 V, I_D = 9 A,
V_GS = 10 V,
(see Figure 19)
25
nC
14
nC
4
nC
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
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