STD10NM65N_08 Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 650 V, 0.43 Ω, 9 A MDmesh™ II Power MOSFET TO-220, TO-220FP, IPAK, DPAK

STD10NM65N - STF10NM65N - STP10NM65N - STU10NM65N
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220/IPAK
DPAK
TO-220FP
Unit
V_DS
Drain-source voltage (V_GS = 0)
V_GS
Gate-source voltage
I_D
Drain current (continuous) at T_C = 25 °C
I_D
Drain current (continuous) at T_C = 100 °C
I_DM ⁽²⁾ Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
dv/dt ^{(3) Peak diode recovery voltage slope}
V_ISO
T_stg
Insulation withstand voltage (RMS) from all three
leads to external heat sink (t=1 s; T_C = 25 °C)
Storage temperature
T_j
Max. operating junction temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD ≤ 9 A, di/dt ≤ 400 A/µs, V_DD = 80% V_(BR)DSS
650
± 25
9
9⁽¹⁾
5.7
5.7⁽¹⁾
36
36⁽¹⁾
90
25
15
--
2500
-55 to 150
150
V
V
A
A
A
W
V/ns
V
°C
°C
Table 3. Thermal data
Symbol
Parameter
TO-220 IPAK DPAK TO-220FP Unit
R_thj-case
R_thj-pcb
R_thj-amb
T_l
Thermal resistance junction-case
max
Thermal resistance junction-pcb max
Thermal resistance junction-amb
max
Maximum lead temperature for
soldering purpose
--
62.5
1.38
--
50
100
--
300
5
°C/W
--
°C/W
62.5 °C/W
°C
Table 4. Avalanche characteristics
Symbol
Parameter
I_AS
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting T_j = 25 °C, I_D = I_AS, V_DD= 50 V)
Max value
Unit
2.5
A
200
mJ
3/17