STD10NF30 Datasheet, PDF (4/16 Pages) STMicroelectronics – Very low intrinsic capacitances

Electrical characteristics
2
Electrical characteristics
STD10NF30
(T_C = 25 °C unless otherwise specified).
Symbol
Parameter
Table 5. On /off states
Test conditions
Drain-source
V_(BR)DSS breakdown voltage
(V_GS = 0)
I_D = 1 mA
Zero gate voltage
V_DS = 300 V
I_DSS
drain current (V_GS = 0) _{VDS = 300 V, TC=125 °C}
I_GSS
Gate-body leakage
current (V_DS = 0)
V_GS = ± 20 V
V_GS(th) Gate threshold voltage V_DS = V_GS, I_D = 250 μA
Static drain-source
R_{DS(on) on-resistance}
V_GS = 10 V, I_D = 5 A
Min. Typ. Max. Unit
300
V
1 μA
10 μA
±100 nA
2
3
4V
0.28 0.33 Ω
Symbol
Parameter
C_iss
C_oss
C_rss
Q_g
Q_gs
Q_gd
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6. Dynamic
Test conditions
V_DS = 25 V, f = 1 MHz,
V_GS = 0
V_DD = 240 V, I_D = 10 A,
V_GS = 10 V
(see Figure 14)
Min. Typ. Max. Unit
- 780 - pF
-
110
- pF
-
15
- pF
-
23
- nC
-
3.5
- nC
- 11.3 - nC
Symbol
Parameter
Table 7. Switching times
Test conditions
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off-delay time
Fall time
V_DD = 150 V, I_D = 5 A,
R_G = 4.7 Ω, V_GS = 10 V
(see Figure 13)
Min. Typ. Max Unit
- 13.5 - ns
- 9.5 - ns
- 32 - ns
- 9.5 - ns
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