STD10NF30 Datasheet, PDF (3/16 Pages) STMicroelectronics – Very low intrinsic capacitances

STD10NF30
1
Electrical ratings
Electrical ratings
Symbol
Table 2. Absolute maximum ratings
Parameter
Value
V_DS Drain-source voltage
V_GS Gate-source voltage
I_D Drain current (continuous) at T_C = 25 °C
I_D Drain current (continuous) at T_C = 100 °C
(1)
I_DM Drain current (pulsed)
P_TOT Total dissipation at T_C = 25 °C
(2)
dv/dt Peak diode recovery voltage slope
T_stg Storage temperature
T_j Max. operating junction temperature
1. Pulse width limited by safe operating area
2. I_SD ≤ 10 A, di/dt ≤ 200 A/μs, V_DD= 80% V_(BR)DSS
300
± 20
10
6.3
40
103
12
- 55 to 175
Symbol
Table 3. Thermal data
Parameter
R_thj-case Thermal resistance junction-case max
(1)
R_thj-pcb Thermal resistance junction-pcb max
1. When mounted on 1 inch² FR-4, 2 Oz copper board
Value
1.45
50
Symbol
Table 4. Thermal data
Parameter
Avalanche current, repetitive or not-
I_{AR repetitive (pulse width limited by Tj max)}
Single pulse avalanche energy
E_AS
(starting T_j = 25°C, I_D = I_AR, V_DD = 50 V)
Value
6
175
Unit
V
V
A
A
A
W
V/ns
°C
°C
Unit
°C/W
°C/W
Unit
A
mJ
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