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| STC12IE90HV Datasheet, PDF (4/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm | |||
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Electrical characteristics
2
Electrical characteristics
STC12IE90HV
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector-source current
ICS(SS) (VBS = VGS = 0)
VCE = 900V
100 µA
Base-source current
IBS(OS) (IC = 0, VGS = 0)
VBS(OS) = 30V
10 µA
Source-base current
ISB(OS) (IC = 0, VGS = 0)
VSB(OS) = 17V
100 µA
IGS(OS) Gate-source leakage
VGS = ± 17V
100 nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A IB = 0.6A
1
0.6
V
V
hFE DC current gain
VGS = 10V_ IC = 12A VCS = 1V
VGS = 10V_ IC = 6A_ VCS = 1V
5
15
VBS(ON)
Base Source ON voltage VGS = 10V_ IC = 12A IB = 2.4A
VGS = 10V_ IC = 6A_ IB = 0.6A
1.5
1.2
V
V
VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA
2
3
4
V
Ciss Input capacitance
VCS =25V f =1MHz
VGS=0V
520
pF
QGS(tot) Gate-source Charge
VCS=25V
VCB=0V
VGS=10V
IC =4A
21.3
nC
ts
INDUCTIVE LOAD
Storage time
tf
Fall time
VGS =10V
VClamp =720V
IC =6A
RG =47â¦
tp =4µs
IB =1.2A
610
ns
10
ns
INDUCTIVE LOAD
ts
Storage time
tf
Fall time
VGS =10V
VClamp =720V
IC =6A
RG =47â¦
tp =4µs
IB =0.6A
360
ns
10
ns
VCSW
Maximum collector-
source voltage switched
without snubber
RG =47â¦
IC = 12A
hFE =5
900
V
4/11
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