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| STC12IE90HV Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 900 V - 12A - 0.083 ohm | |||
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STC12IE90HV
Emitter Switched Bipolar Transistor
ESBT® 900 V - 12 A - 0.083 â¦
Preliminary Data
General features
VCS(ON)
IC
1V
12A
RCS(ON)
0.083 W
â High voltage / high current Cascode
configuration
â Low equivalent on resistance
â Very fast-switch up to 150 kHz
â Squared RBSOA up to 900V
â Very low Ciss driven by RG = 47â¦
â Very low turn-off cross over time
Applications
â Aux Smps For Three Phase Mains
Description
The STC12IE90HV is manufactured in Monolithic
ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage applica-
tions.
It is designed for use in Gate Driven based topolo-
gies.
234
1
TO247-4L HV
Internal schematic diagrams
Order codes
Part Number
Marking
STC12IE90HV
C12IE90HV
Package
TO247-4L HV
Packaging
Tube
January 2007
Rev 1
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
1/11
www.st.com
11
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