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| STC08IE120HV Datasheet, PDF (4/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm | |||
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Electrical characteristics
2
Electrical characteristics
STC08IE120HV
(Tcase = 25°C unless otherwise specified)
Table 3.
Symbol
Electrical characteristics
Parameter
Test Conditions
Min. Typ. Max. Unit
Collector-source current
ICS(SS) (VBS = VGS = 0)
VCE = 1200V
100 µA
Base-source current
IBS(OS) (IC = 0, VGS = 0)
VBS(OS) = 30V
10 µA
Source-base current
ISB(OS) (IC = 0, VGS = 0)
VSB(OS) = 17V
100 µA
IGS(OS) Gate-source leakage
VGS = ± 17V
100 nA
VCS(ON)
Collector-source ON
voltage
VGS = 10V _IC = 8A IB = 1.6A
VGS = 10V_ IC = 4A IB = 0.4A
0.8 1 V
0.5 1.2 V
hFE DC current gain
VGS = 10V_ IC = 8A VCS = 1V 5
VGS = 10V_ IC = 4A_ VCS = 1V 7
VBS(ON)
Base Source ON voltage VGS = 10V_ IC = 8A IB = 1.6A
VGS = 10V_ IC = 4A_ IB = 0.4A
1.5
1.5
V
V
VGS(th) Gate threshold voltage VBS = VGS ______IB = 250µA
2
3
4
V
CISS Input capacitance
VCS = 25V ______f = 1MHz
VGS = 0
550
pF
QGS(tot) Gate-source charge
VGS = 10V
26
nC
ts
INDUCTIVE LOAD
Storage time
tf
Fall time
IC = 4A IB = 0.8A VGS = 10V
VClamp = 960V RG = 47â¦
tp = 4µs
670
ns
15
ns
ts
INDUCTIVE LOAD
Storage time
tf
Fall time
IC = 4A IB = 0.4A VGS = 10V
VClamp = 960V RG = 47â¦
tp = 4µs
340
ns
10.2
ns
Maximum collector-
VCSW source voltage switched RG = 47⦠hFE = 5A IC = 8A 1200
V
without snubber
Collector-source
VCC = VClamp = 400V VGS = 10V
VCS(dyn) dynamic voltage
RG = 47⦠IC = 4A IB = 0.8A
5.75
V
(500ns)
IBpeak = 4A tpeak = 500ns
Collector-source
VCC = VClamp = 400V VGS = 10V
VCS(dyn) dynamic voltage
RG = 47⦠IC = 4A IB = 0.8A
3.35
V
(1 µs)
IBpeak = 4A tpeak = 500ns
4/11
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