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| STC08IE120HV Datasheet, PDF (1/11 Pages) STMicroelectronics – Emitter Switched Bipolar Transistor ESBT 1200 V - 8A - 0.10 ohm | |||
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STC08IE120HV
Emitter Switched Bipolar Transistor
ESBT® 1200 V - 8 A - 0.10 â¦
General features
VCS(ON)
IC
0.8 V
8A
RCS(ON)
0.10 W
â High voltage / high current Cascode
configuration
â Low equivalent on resistance
â very fast-switch up to 150 kHz
â Squared RBSOA up to 1200V
â Very low Ciss driven by RG = 47â¦
â Very low turn-off cross over time
Applications
â Flyback / forward SMPS
â Sepic PFC
Description
The STC08IE120HV is manufactured in Monolith-
ic ESBT Technology, aimed to provide best perfor-
mances in high frequency / high voltage
applications.
It is designed for use in Gate Driven based topolo-
gies.
234
1
TO247-4L HV
Internal schematic diagrams
Order codes
Part Number
Marking
STC08IE120HV
C08IE120HV
Package
TO247-4L HV
Packaging
Tube
January 2007
Rev 3
1/11
www.st.com
11
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