STB80NF03L-04T4_09 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET™ II Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB80NF03L-04T4
(T_CASE=25 °C unless otherwise specified)
Table 4.
Symbol
On/off states
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS = 0
30
V
V_DS = max rating
V_DS = max rating @125 °C
1 µA
10 µA
V_GS = ±20 V
±100 nA
V_DS = V_GS, I_D = 250 µA
V_GS = 10 V, I_D = 40 A
V_GS = 4.5 V, I_D = 40 A
1
V
0.0035 0.004 Ω
0.004 0.0055 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 15 V _, I_D = 15 A
V_DS = 25 V, f = 1 MHz,
V_GS = 0
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 24 V, I_D = 80 A,
V_GS = 4.5 V
Figure 15
1. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Min.
-
Typ.
50
Max. Unit
S
5500
pF
- 1670
pF
290
pF
85
110 nC
-
23
nC
40
nC
4/13
Doc ID 8479 Rev 4