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STB80NF03L-04T4_09 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET™ II Power MOSFET
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STB80NF03L-04T4
1
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
VDS
VGS
ID(1)
ID (1)
IDM(2)
PTOT
dv/dt (3)
EAS(4)
Tstg
Tj
Drain-source voltage (VGS = 0)
Gate-source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC = 100 °C
Drain current (pulsed)
Total dissipation at TC = 25 °C
Derating factor
Peak diode recovery voltage slope
Single pulse avalanche energy
Storage temperature
Operating junction temperature
1. Limited by package
2. Pulse width limited by safe operating area
3. ISD ≤ 80 A, di/dt ≤ 240 A/µs, VDD ≤ V(BR)DSS, TJ ≤ TJMAX
4. Starting Tj = 25 °C, ID = 80 A, VDD = 50 V
Table 3. Thermal resistance
Symbol
Parameter
Rthj-case
Rthj-amb
Tl
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Maximum lead temperature for soldering purpose
Electrical ratings
Value
30
±20
80
80
320
300
2
2
2.3
-60 to 175
Unit
V
V
A
A
A
W
W/°C
V/ns
J
°C
Value
0.5
62.5
300
Unit
°C/W
°C/W
°C
Doc ID 8479 Rev 4
3/13
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