 English |
|
|
|
|
|
|
|
| STB80NE03L-06_06 Datasheet, PDF (4/13 Pages) STMicroelectronics – N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET | |||
| |||
| ◁ |
Electrical characteristics
2
Electrical characteristics
STB80NE03L-06
(TCASE = 25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V(BR)DSS
Drain-source breakdown
voltage
ID = 250µA, VGS= 0
30
IDSS
Zero gate voltage drain
current (VGS = 0)
VDS = Max rating,
VDS = Max rating @125°C
IGSS
Gate body leakage current
(VDS = 0)
VDS = ± 20V
VGS(th) Gate threshold voltage
VDS= VGS, ID = 250µA
1
RDS(on)
Static drain-source on
resistance
VGS = 10 V, ID = 40A
VGS = 4.5 V, ID = 40A
V
1 µA
10 µA
±100 nA
1.7
2.5
V
0.005 0.006 â¦
0.008 â¦
Table 5. Dynamic
Symbol
Parameter
Test conditions
gfs(1)
Ciss
Coss
Crss
Forward transconductance
Input capacitance
Output capacitance
Reverse Transfer
Capacitance
VDS > ID(on) x RDS(on)max,
ID = 40A
VDS = 25V, f = 1 MHz,
VGS =0
Qg Total gate charge
Qgs Gate-source charge
Qgd Gate-drain charge
VDD = 24 V, ID = 80A,
VGS = 5V
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
Table 6. Switching times
Symbol
Parameter
Test conditions
td(on)
tr
tr(Voff)
tf
tc
Turn-on delay time
Rise time
Off-voltage rise time
Fall time
Cross over time
VDD = 15 V, ID = 40 A
RG = 4.7⦠VGS = 4.5 V
Figure 12.
VDD = 24 V, ID = 80 A,
RG = 4.7â¦, VGS = 5V
Figure 12.
Min.
30
Min.
Typ.
50
6500
1500
500
95
30
44
Typ.
40
260
70
165
250
Max. Unit
S
pF
pF
pF
130 nC
nC
nC
Max. Unit
55 ns
350 ns
95 ns
220 ns
340 ns
4/13
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese