STB80NE03L-06_06 Datasheet, PDF (3/13 Pages) STMicroelectronics – N-channel 30V - 0.005ohm - 85A - D2PAK STripFET TM Power MOSFET

STB80NE03L-06
1
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽¹⁾
Drain-source voltage (V_GS = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C = 100°C
Drain current (pulsed)
Derating factor
P_TOT
dv/dt ⁽²⁾
Total dissipation at T_C = 25°C
Peak diode recovery voltage slope
T_J
Operating junction temperature
Tstg Storage temperture
1. Pulse width limited by safe operating area
2. I_SD < 20A, di/dt < 100A/µs, V_DD = 80% V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
R_thJC
R_thJA
T_l
Thermal resistance junction-case Max
Thermal resistance junction-ambient Max
Maximum lead temperature for soldering
purpose
Table 3. Avalanche characteristics
Symbol
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_AS
(starting Tj=25°C, Id=Iar, Vdd=50V)
Electrical ratings
Value
30
30
± 20
80
60
320
1
150
7
-55 to 175
Unit
V
V
V
A
A
A
W
V/ns
°C
Value
1
62.5
300
Unit
°C/W
°C/W
°C
Max Value
Unit
80
A
600
mJ
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