STB6N80K5 Datasheet, PDF (4/26 Pages) STMicroelectronics – Zener-protected

Electrical characteristics
STB6N80K5, STD6N80K5, STI6N80K5, STP6N80K5
2
Electrical characteristics
(T_CASE = 25 °C unless otherwise specified).
Symbol
Parameter
Table 4. On/off states
Test conditions
V_(BR)DSS
Drain-source breakdown
voltage (V_GS= 0)
I_DSS
Zero gate voltage drain
current (V_GS = 0)
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS(th) Gate threshold voltage
Static drain-source
R_{DS(on) on-resistance}
I_D = 1 mA
V_DS = 800 V
V_DS = 800 V, T_j = 125 °C
V_GS = ± 20 V
V_DS = V_GS, I_D = 100 µA
V_GS = 10 V, I_D = 2 A
Min. Typ. Max. Unit
800
V
1 µA
50 µA
±10 µA
3
4
5
V
1.3 1.6 Ω
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 100 V, f = 1 MHz,
V_GS = 0
- 270 - pF
- 25 - pF
- 0.7 - pF
C_o(tr)(1)
C_o(er)(2)
Equivalent capacitance time
related
Equivalent capacitance
energy related
V_GS = 0,
V_DS = from 0 to 640 V
- 38 - pF
- 16 - pF
R_G Intrinsic gate resistance
f = 1MHz, I_D = 0
- 7.5 -
Ω
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 640 V, I_D = 4.5 A
V_GS = 10 V
- 13 - nC
- 2.1 - nC
- 9.6 - nC
1. Time related is defined as a constant equivalent capacitance giving the same charging time as C_oss when
V_DS increases from 0 to 80% V_DSS
2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C_oss
when V_DS increases from 0 to 80% V_DSS
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DocID024661 Rev 3