STB34N50DM2AG Datasheet, PDF (4/15 Pages) STMicroelectronics – Fast-recovery body diode

Electrical characteristics
STB34N50DM2AG
2
Electrical characteristics
(Tcase = 25 °C unless otherwise specified)
Table 5: Static
Symbol
Parameter
Test conditions
V(BR)DSS
Drain-source breakdown
voltage
VGS = 0 V, ID = 1 mA
VGS = 0 V, VDS = 500 V
IDSS
Zero gate voltage drain
current
VGS = 0 V, VDS = 500 V,
Tcase = 125 °C
IGSS
Gate-body leakage
current
VDS = 0 V, VGS = ±25 V
VGS(th)
RDS(on)
Gate threshold voltage
Static drain-source on-
resistance
VDS = VGS, ID = 250 µA
VGS = 10 V, ID = 12.5 A
Min. Typ. Max. Unit
500
V
10
µA
100
±5 µA
3
4
5
V
0.10 0.12 Ω
Symbol
Ciss
Coss
Crss
Coss eq.⁽¹⁾
RG
Qg
Qgs
Qgd
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Equivalent output
capacitance
Intrinsic gate resistance
Total gate charge
Gate-source charge
Gate-drain charge
Table 6: Dynamic
Test conditions
VDS = 100 V, f = 1 MHz,
VGS = 0 V
VDS = 0 to 400 V, VGS = 0 V
f = 1 MHz, ID = 0 A
VDD = 480 V, ID = 25 A,
VGS = 10 V (see Figure 15:
"Test circuit for gate charge
behavior")
Min. Typ. Max. Unit
- 1850 -
- 100
-
pF
-
2.7
-
- 160 - pF
- 4.5
-
Ω
-
44
-
- 10.5 - nC
-
19
-
Notes:
(1) _{Coss eq. is defined as a constant equivalent capacitance giving the same charging time as Coss when VDS}
increases from 0 to 80% VDSS.
Symbol
Parameter
td(on)
tr
td(off)
Turn-on delay time
Rise time
Turn-off delay time
tf
Fall time
Table 7: Switching times
Test conditions
VDD = 250 V, ID = 12.5 A
RG = 4.7 Ω, VGS = 10 V (see
Figure 14: "Test circuit for
resistive load switching times"
and Figure 19: "Switching time
waveform")
Min. Typ. Max. Unit
- 19.5 -
- 11.5 -
- 65.5 -
ns
- 8.1 -
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