STB34N50DM2AG Datasheet, PDF (1/15 Pages) STMicroelectronics – Fast-recovery body diode

STB34N50DM2AG
Automotive-grade N-channel 500 V, 0.10 Ω typ., 26 A
MDmesh™ DM2 Power MOSFET in a D²PAK package
Datasheet - production data
TAB
3
1
D2PAK
Figure 1: Internal schematic diagram
Features
Order code
VDS
STB34N50DM2AG 500 V
RDS(on)
max.
0.12 Ω
ID
PTOT
26 A 190 W
 Designed for automotive applications and
AEC-Q101 qualified
 Fast-recovery body diode
 Extremely low gate charge and input
capacitance
 Low on-resistance
 100% avalanche tested
 Extremely high dv/dt ruggedness
 Zener-protected
Applications
 Switching applications
Description
This high voltage N-channel Power MOSFET is
part of the MDmesh™ DM2 fast recovery diode
series. It offers very low recovery charge (Qrr)
and time (trr) combined with low RDS(on), rendering
it suitable for the most demanding high efficiency
converters and ideal for bridge topologies and
ZVS phase-shift converters.
Order code
STB34N50DM2AG
Table 1: Device summary
Marking
Package
34N50DM2
D²PAK
Packing
Tape and reel
August 2015
DocID028248 Rev 1
This is information on a product in full production.
1/15
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