STB270N04 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-CHANNEL 40V - 2.1m-ohm - 160A - TO-220 - D-2PAK - I-2PAK STripFET-TM Power MOSFET

Electrical characteristics
STB270N04-1 - STB270N04 - STP270N04
Table 5. Switching times
Symbol
Parameter
t_d(on)
t_r
Turn-on Delay Time
Rise Time
t_d(off)
t_f
Turn-off Delay Time
Fall Time
Test Condictions
V_DD=20 V, I_D= 80A,
R_G=4.7Ω, V_GS=10V
(see Figure 14)
V_DD=20 V, I_D= 80A,
R_G=4.7Ω, V_GS=10V
(see Figure 14)
Min. Typ. Max. Unit
22
ns
180
ns
110
ns
45
ns
Table 6. Source drain diode
Symbol
Parameter
Test Condictions Min Typ. Max Unit
I_SD Source-drain Current
D²PAK
TO-220
I²PAK
I_SDM(1)
Source-drain Current
(pulsed)
D²PAK
TO-220
I²PAK
V_SD(2) Forward on Voltage
I_SD=80A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD=160A,
di/dt = 100A/µs,
V_DD=32V, Tj=150°C
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
160 A
120 A
640 A
480 A
1.5 V
70
ns
225
nC
3.2
A
4/14
Rev3