STB270N04 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-CHANNEL 40V - 2.1m-ohm - 160A - TO-220 - D-2PAK - I-2PAK STripFET-TM Power MOSFET

STB270N04-1 - STB270N04 - STP270N04
2
Electrical characteristics
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test Condictions
V_(BR)DSS
Drain-Source
Breakdown Voltage
I_D = 250µA, V_GS= 0
I_DSS
Zero Gate Voltage Drain ^{VDS = Max Rating,}
Current (V_GS = 0)
V_DS = MaxRating
@125°C
I_GSS
Gate Body Leakage
Current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate Threshold Voltage V_DS= V_GS, I_D = 250µA
R_DS(on)
Static Drain-Source On
Resistance
V_GS= 10V, I_D= 80A
Min. Typ. Max. Unit
40
V
10 µA
100 µA
±200 nA
2
TO-220
I²PAK
D²PAK
4V
2.5 2.9 mΩ
2.1 2.5 mΩ
Table 4. Dynamic
Symbol
Parameter
Test Condictions
g_fs ⁽¹⁾ Forward Transconductance ^VDS ^{=15V, I}D ^{= 80A}
C_iss
C_oss
C_rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V_DS =25V, f=1 MHz, V_GS=0
Q_{g Total Gate Charge}
Q_gs Gate-Source Charge
Q_gd Gate-Drain Charge
V_DD=20V, I_D = 160A
V_GS =10V
(see Figure 2)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Min. Typ. Max. Unit
200
S
7400
pF
1800
pF
47
pF
110 150 nC
27
nC
25
nC
Rev3
3/14