STB180N55F3 Datasheet, PDF (4/14 Pages) STMicroelectronics – N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET

Electrical characteristics
2
Electrical characteristics
STB180N55F3 - STP180N55F3
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 250µA, V_GS= 0
55
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS= max rating,
V_DS= max rating,@125°C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10V, I_D= 60A
D²PAK
TO-220
V
10 µA
100 µA
±200 nA
4
V
2.9 3.5 mΩ
3.2 3.8 mΩ
Table 4.
Symbol
Dynamic
Parameter
Test conditions
g_fs ⁽¹⁾
Forward
transconductance
V_DS = 15V _, I_D = 60A
C_iss
C_oss
C_rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1MHz,
V_GS = 0
t_d(on)
t_r
t_d(off)
t_f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V_DD = 27.5V, I_D = 60A
R_G = 4.7Ω V_GS = 10V
(see Figure 12,
Figure 17)
Q_g
Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 44V, I_D = 120A,
V_GS = 10V,
(see Figure 13)
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
Min. Typ. Max. Unit
150
S
6800
pF
1450
pF
15
pF
25
ns
150
ns
110
ns
50
ns
100
nC
30
nC
26
nC
4/14