STB180N55F3 Datasheet, PDF (3/14 Pages) STMicroelectronics – N-channel 55V - 3.2mΩ - 120A - D2PAK/TO-220 STripFET™ Power MOSFET

STB180N55F3 - STP180N55F3
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_GS
I_D ⁽¹⁾
I_D ⁽¹⁾
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS=0)
Gate-source voltage
Drain current (continuous) at T_C = 25°C
Drain current (continuous) at T_C=100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
dv/dt ^{(3) Peak diode recovery voltage slope}
E_AS ⁽⁴⁾
T_j
T_stg
Single pulse avalanche energy
Operating junction temperature
storage temperature
1. Current limited by package.
2. Pulse width limited by safe operating area.
3. I_SD < 120A, di/dt < 900A/µs, V_DD < V_(BR)DSS, T_J < T_JMAX
4. Starting Tj=25°C, Id=60A, Vdd=40V (see Figure 15 and Figure 16)
Value
55
± 20
120
120
480
330
2.2
11
1000
-55 To 175
Table 2. Thermal data
Symbol
Parameter
Rthj-case Thermal resistance junction-case
Rthj-a
Thermal resistance junction-ambient
max
Rthj-pcb⁽¹⁾
Thermal resistance junction-ambient
max
T_l
Maximum lead temperature for
soldering purpose
1. When mounted on FR-4 board, on 1inch², 2oz Cu.
TO-220
0.45
62.5
D²PAK
--
--
50
300
Unit
V
V
A
A
A
W
W/°C
V/ns
mJ
°C
Unit
°C/W
°C/W
°C/W
°C
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