STB16NM50N Datasheet, PDF (4/18 Pages) STMicroelectronics – N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

Electrical characteristics
STB16NM50N - STF/I16NM50N - STP16NM50N - STW16NM50N
2
Electrical characteristics
(T_CASE=25 °C unless otherwise specified)
Table 5. On/off states
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
V_(BR)DSS
Drain-source breakdown
voltage
I_D = 1 mA, V_GS= 0
500
dv/dt⁽¹⁾
Drain-source voltage slope
V_DD = 400 V,I_D = 15 A,
V_GS = 10 V
I_DSS
Zero gate voltage drain
current (V_GS = 0)
V_DS = Max rating,
V_DS = Max rating@125 °C
I_GSS
Gate body leakage current
(V_DS = 0)
V_GS = ±20 V
V_GS(th) Gate threshold voltage
V_DS= V_GS, I_D = 250 µA
2
R_DS(on)
Static drain-source on
resistance
V_GS= 10 V, I_D= 7.5 A
30
3
0.21
1
100
100
4
0.26
V
V/ns
µA
µA
nA
V
Ω
1. Characteristics value at turn off on inductive load
Table 6. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs(1)
C_iss
C_oss
C_rss
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
V_DS =15 V, I_D= 7.5 A
V_DS = 50 V, f =1 MHz,
V_GS = 0
10
S
1200
pF
80
pF
10
pF
C_oss
(2)
eq.
Equivalent output
capacitance
V_GS = 0, V_DS = 0 to 400 V
170
pF
f=1 MHz Gate DC Bias=0
Rg Gate input resistance
Test signal level=20 mV
5
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 400 V, I_D = 15 A
V_GS = 10 V
(see Figure 19)
38
nC
7
nC
19
nC
1. Pulsed: pulse duration = 300µs, duty cycle 1.5%
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS
4/18