STB16NM50N Datasheet, PDF (1/18 Pages) STMicroelectronics – N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET D2PAK - I2PAK - TO-220 - TO-247- TO-220FP

STB16NM50N - STF/I16NM50N
STP16NM50N - STW16NM50N
N-channel 500 V - 0.21 Ω - 15 A MDmesh™ II Power MOSFET
D²PAK - I²PAK - TO-220 - TO-247- TO-220FP
Features
Type
V_DSS
R_DS(on)
(@Tjmax) max
I_D
STB16NM50N
STI16NM50N
STF16NM50N
STP16NM50N
STW16NM50N
550 V
550 V
550 V
550 V
550 V
0.26 Ω
0.26 Ω
0.26 Ω
0.26 Ω
0.26 Ω
15 A
15 A
15 A ⁽¹⁾
15 A
15 A
1. Limited only by maximum temperature allowed
■ 100% avalanche tested
■ Low input capacitance and gate charge
■ Low gate input resistance
Application
■ Switching applications
Description
This series of devices is designed using the
second generation of MDmesh™ technology. This
revolutionary Power MOSFET associates a new
vertical structure to the company’s strip layout to
yield one of the world’s lowest on-resistance and
gate charge. It is therefore suitable for the most
demanding high efficiency converters.
3
1
D²PAK
3
2
1
TO-220
123
I²PAK
3
2
1
TO-247
3
2
1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STB16NM50N
B16NM50N
STI16NM50N
I16NM50N
STF16NM50N
F16NM50N
STP16NM50N
STW16NM50N
P16NM50N
W16NM50N
Package
D²PAK
I²PAK
TO-220FP
TO-220
TO-247
Packaging
Tape and reel
Tube
Tube
Tube
Tube
March 2008
Rev 2
1/18
www.st.com
18