STB13NK60Z_05 Datasheet, PDF (4/17 Pages) STMicroelectronics – N-CHANNEL 600V-0.48Ω-13A-TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET

2 Electrical characteristics STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
Table 7. Gate-source zener diode
Symbol
Parameter
Test Conditions
Min.
BV_GSO
Note 6
Gate-Source Breakdown
Voltage
Igs=±1mA
(Open Drain)
30
Table 8. Source drain diode
Symbol
Parameter
Test Conditions
I_SD
Source-drain Current
I_SDMNote 2 Source-drain Current (pulsed)
V_SDNote 4 Forward on Voltage
I_SD = 10 A, V_GS=0
t_rr
Q_rr
I_RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I_SD= 10A, di/dt = 100A/µs,
V_DD=35 V, Tj=150°C
Min.
Typ.
Max. Unit
V
Typ. Max. Unit
10
A
40
A
1.6
V
570
ns
4.5
µC
16
A
(1) Limited only by maximum temperature allowed
(2) Pulse width limited by safe operating area
(3) I_SD ≤13A, di/dt ≤200A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(4) Pulsed: pulse duration = 300µs, duty cycle 1.5%
(5) C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS increases from 0
to 80%
(6) The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability,
but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to source. In
this respect the Zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
(7) When mounted on minimum Footprint
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