STB13NK60Z_05 Datasheet, PDF (2/17 Pages) STMicroelectronics – N-CHANNEL 600V-0.48Ω-13A-TO-220/FP-D²/I²PAK-TO-247 Zener-Protected SuperMESH™ MOSFET

1 Electrical ratings
STB13NK60Z - STB13NK60Z-1 - STP13NK60Z/FP - STW13NK60Z
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
Drain-Source Voltage (V_GS = 0)
V_DGR Drain-gate Voltage (R_GS = 20kΩ)
V_GS
Gate-Source Voltage
I_D
Drain Current (continuous) at T_C = 25°C
I_D
Drain Current (continuous) at T_C = 100°C
I_DM Note 2 Drain Current (pulsed)
P_TOT
Total Dissipation at T_C = 25°C
Derating Factor
Vesd(G-S) G-S ESD (HBM C=100pF, R=1.5kΩ)
dv/dt Note 3 Peak Diode Recovery voltage slope
V_ISO
Insulation Withstand Volatge (DC)
T_j
Operating Junction Temperature
T_stg
Storage Temperature
Value
TO-220 / TO-247
I²PAK / D²PAK
TO-220FP
600
600
± 30
13
13 (Note 1)
8.2
8.2 (Note 1)
52
52 (Note 1)
150
35
1.20
0.27
4000
4.5
--
2500
-55 to 150
Unit
V
V
V
A
A
A
W
W/°C
V
V/ns
V
°C
Table 2. Thermal data
Rthj-case
Rthj-pcb
Note 7
Rthj-amb
T_l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-pcb Max
Thermal Resistance Junction-amb Max
Maximum Lead Temperature For Soldering
Purpose
TO-220
I²PAK / TO-247
D²PAK
0.83
--
60
62.5
300
TO-220FP Unit
3.6
°C/W
--
°C/W
°C/W
°C
Table 3. Avalanche characteristics
Symbol
Parameter
Max Value
Unit
I_AR
Avalanche Current, repetitive or
Not-Repetitive (pulse width limited by Tj max)
10
A
Single Pulse Avalanche Energy
E_AS
(starting Tj=25°C, I_D=I_AR, V_DD= 50V)
400
mJ
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