STB11NM60FD Datasheet, PDF (4/17 Pages) STMicroelectronics – N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

Electrical characteristics STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
2
Electrical characteristics
(T_CASE=25°C unless otherwise specified)
Table 4. On/off states
Symbol
Parameter
V_(BR)DSS
Drain-source breakdown
voltage
Zero gate voltage
I_{DSS Drain current (VGS = 0)}
I_GSS
V_GS(th)
R_DS(on)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 250 µA, V_GS = 0
600
V
V_DS = Max rating
V_DS=Max rating, T_C=125°C
1 µA
100 µA
V_GS = ±30V
±100 nA
V_DS = V_GS, I_D = 250µA
3
4
5
V
V_GS = 10V, I_D = 5.5A
0.40 0.45 W
Table 5. Dynamic
Symbol
Parameter
Test conditions
Min. Typ. Max. Unit
g_fs ⁽¹⁾
Forward transconductance
V_DS > I_D(on) x R_DS(on)max,
I_D = 5.5A
5.2
S
C_iss Input capacitance
900
pF
C_oss
C_rss
Output capacitance
Reverse transfer
capacitance
V_DS = 25V, f = 1 MHz,
V_GS = 0
350
pF
35
pF
C_{oss eq} ⁽²⁾
Equivalent output
capacitance
V_GS = 0V, V_DS = 0V to
400V
100
pF
f=1 MHz Gate DC Bias= 0
R_G Gate input resistance
test signal level = 20mV
3
Ω
open drain
Q_g Total gate charge
Q_gs Gate-source charge
Q_gd Gate-drain charge
V_DD = 400V, I_D = 11A,
V_GS = 10V
(see Figure 15)
28 40 nC
7.8
nC
13
nC
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2. C_{oss eq.} is defined as a constant equivalent capacitance giving the same charging time as C_oss when V_DS
increases from 0 to 80% V_DSS.
4/17