STB11NM60FD Datasheet, PDF (3/17 Pages) STMicroelectronics – N-channel 600V - 0.40OHM - 11A - TO-220/TO-220FP/D2PAK/I2PAK FDmesh TM Power MOSFET (with fast diode)

STB11NM60FD - STB11NM60FD-1 - STP11NM60FD - STP11NM60FDFP
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
V_DS
V_DGR
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
dv/dt ⁽³⁾
Drain-source voltage (v_gs = 0)
Drain-gate voltage (R_GS = 20 kΩ)
Gate- source voltage
Drain current (continuos) at T_C = 25°C
Drain current (continuos) at T_C = 100°C
Drain current (pulsed)
Total dissipation at T_C = 25°C
Derating factor
Peak diode recovery voltage slope
V_ISO Insulation winthstand voltage (dc)
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD<11A, di/dt<400A/µs, V_DD= 80% V_(BR)DSS
Table 2. Thermal resistance
Symbol
Parameter
R_thj-case Thermal resistance junction-case Max
R_thj-a Thermal resistance junction-ambient Max
T_l
Maximum lead temperature for soldering
purpose
Value
TO-220/
D²PAK/I²PAK
TO-220FP
600
600
±30
11
11 ⁽¹⁾
7
7 ⁽¹⁾
44
44 ⁽¹⁾
160
35
0.88
0.28
20
--
2500
–65 to 150
Unit
V
V
V
A
A
A
W
W/°C
V/ns
V
°C
Value
TO-220
D²PAK/I²PAK
TO-220FP
0.78
3.57
62.5
Unit
°C/W
°C/W
300
°C
Table 3. Avalanche data
Symbol
Parameter
Avalanche current, repetitive or not-repetitive
I_AR
(pulse width limited by T_j max)
Single pulse avalanche energy
E_{AS (starting Tj = 25°C, ID = IAR, VDD = 35V)}
Value
Unit
5.5
A
350
mJ
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