STB10NK60Z_08 Datasheet, PDF (4/19 Pages) STMicroelectronics – N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247

Electrical ratings
STB10NK60Z, STP10NK60Z, STW10NK60Z
Table 4.
Symbol
Avalanche characteristics
Parameter
I_AR
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
E_{AS (starting Tj=25 °C, ID=IAR, VDD= 50 V)}
Repetitive avalanche energy
E_{AR (pulse width limited by Tj max)}
Max value
Unit
9
A
300
mJ
3.5
mJ
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