STB10NK60Z_08 Datasheet, PDF (3/19 Pages) STMicroelectronics – N-channel 650 V, 0.65 Ω, 10 A, SuperMESH™ Power MOSFET Zener-protected I2PAK, D2PAK, TO-220, TO-220FP, TO-247

STB10NK60Z, STP10NK60Z, STW10NK60Z
1
Electrical ratings
Electrical ratings
Table 2. Absolute maximum ratings
Symbol
Parameter
Value
TO-220
D²PAK,I²PAK
TO-220FP
TO-247
Unit
V_DS
V_GS
I_D
I_D
I_DM ⁽²⁾
P_TOT
Drain-source voltage (V_GS = 0)
Gate-source voltage
Drain current (continuous) at T_C = 25 °C
Drain current (continuous) at T_C = 100 °C
Drain current (pulsed)
Total dissipation at T_C = 25 °C
Derating factor
Vesd(G-S) G-S ESD (HBM C=100 pF, R=1.5 kΩ)
dv/dt ⁽³⁾ Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
V_ISO all three leads to external heat sink
(t=1 s;TC=25 °C)
T_j
Operating junction temperature
T_stg Storage temperature
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I_SD < 10A, di/dt < 200A/µs, V_DD =80% V_(BR)DSS
10
5.7
36
115
0.92
--
600
± 30
10⁽¹⁾
5.7 ⁽¹⁾
36 ⁽¹⁾
35
0.28
4000
4.5
2500
-55 to 150
V
V
10
A
5.7
A
36
A
156
W
1.25 W/°C
V
V/ns
--
V
°C
Table 3. Thermal data
Symbol
Parameter
Value
TO-220
I²PAK
D²PAK TO-220FP TO-247
Unit
R_thj-case Thermal resistance junction-case Max
R_thj-pcb
Thermal resistance junction-pcb Max
(when mounted on minimum footprint)
R_thj-amb Thermal resistance junction-amb Max
T_l
Maximum lead temperature for soldering
purpose
1.09
3.6
60
62.5
300
0.8 °C/W
°C/W
50 °C/W
°C
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