STB100NH02L Datasheet, PDF (4/13 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET

Electrical characteristics
2
Electrical characteristics
STB100NH02L
(T_CASE=25°C unless otherwise specified)
Table 3. On/off states
Symbol
Parameter
Drain-source
V_{(BR)DSS breakdown voltage}
I_DSS
I_GSS
V_GS(th)
Zero gate voltage
drain current (V_GS = 0)
Gate-body leakage
current (V_DS = 0)
Gate threshold voltage
R_DS(on)
Static drain-source on
resistance
Test conditions
Min. Typ. Max. Unit
I_D = 25mA, V_GS =0
V_DS = 20V
V_DS = 20V, T_C = 125°C
V_GS = ± 20V
V_DS = V_GS, I_D = 250µA
V_GS = 10V, I_D = 30A
V_GS = 5V, I_D = 15A
24
V
1
µA
10
µA
±100 nA
1
1.8
V
0.0052 0.006 Ω
0.007 0.011 Ω
Table 4. Dynamic
Symbol
Parameter
Test conditions
g_fs ⁽¹⁾
C_iss
C_oss
C_rss
t_d(on)
t_r
t_d(off)
t_f
Q_g
Q_gs
Q_gd
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
R_G Gate input resistance
V_DS = 10V _, I_D = 30A
V_DS = 15V, f = 1MHz,
V_GS = 0
V_DD = 10V, I_D = 30A
R_G = 4.7Ω V_GS = 10V
(see Figure 13)
V_DD = 10V, I_D = 30A,
V_GS = 10V, R_G = 4.7Ω
(see Figure 14)
f=1 MHz gate DC
Bias=0
test signal level =20 mV
open drain
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
Min.
Typ.
40
2850
800
120
13
75
50
18
47.5
10
7
1
Max.
64
Unit
S
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
Ω
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