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STB100NH02L Datasheet, PDF (3/13 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
STB100NH02L
1
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Vspike(1)
VDS
VDGR
VGS
ID(2)
ID(2)
IDM(3)
Ptot
EAS (4)
Tstg
Tj
Drain-source voltage rating
Drain-source voltage (VGS = 0)
Drain-gate voltage (RGS = 20 kΩ)
Gate- source voltage
Drain current (continuous) at
TC = 25°C
Drain current (continuous) at
TC = 100°C
Drain current (pulsed)
Total dissipation at TC = 25°C
Derating Factor
Single pulse avalanche energy
Storage temperature
Max. operating junction
temperature
1. Garanted when external Rg=4.7Ω and tf < tfmax.
2. Value limited by wire bonding
3. Pulse width limited by safe operating area.
4. Starting Tj = 25 °C, ID = 30A, VDD = 15V
Value
30
24
24
± 20
60
60
240
100
0.67
600
-55 to 175
Table 2. Thermal data
Rthj-case Thermal resistance junction-case max
Rthj-amb Thermal resistance junction-ambient max
TJ
Maximum lead temperature for soldering purpose
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
1.5
°C/W
62.5
°C/W
300
°C
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