SM6T Datasheet, PDF (4/9 Pages) General Semiconductor – TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Characteristics
SM6T
Figure 2.
Peak power dissipation versus Figure 3.
initial junction temperature (printed
circuit board)
Peak pulse power versus
exponential pulse duration
%
100
80
60
40
20
Tj initial (° C)
0
0 20 40 60 80 100 120 140 160 180 200
Figure 4. Clamping voltage versus peak pulse current^(a)
Exponential waveform: tp = 20µs
t_p = 1ms
t_p = 10ms
a. The curves of Figure 4 are specified for a junction temperature of 25 °C before surge. The given results may be
extrapolated for other junction temperatures by using the formula: ΔV_BR = αT * [T_amb -25] * V_BR(25 °C). For intermediate
voltages, extrapolate the given results.
4/9