SM6T Datasheet, PDF (2/9 Pages) General Semiconductor – TRANSZORB™ SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Characteristics
SM6T
1
Characteristics
Table 1. Absolute maximum ratings
Symbol
Parameter
P_PP
P
I_FSM
Peak pulse power dissipation⁽¹⁾
Power dissipation on infinite heatsink
Non repetitive surge peak forward
current for unidirectional types
T_j initial = T_amb
T_amb = 50 °C
t_p = 10 ms
T_j initial = T_amb
T_stg
Storage temperature range
T_j
Operating junction temperature range
T_L
Maximum lead temperature for soldering during 10 s.
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Table 2. Thermal resistance
Symbol
Parameter
R_th(j-l)
R_th(j-a)
Junction to leads
Junction to ambient on printed circuit on recommended
pad layout
Value
600
5
100
-65 to 175
-55 to 150
260
Value
20
100
Table 3.
Symbol
V_RM
V_BR
V_CL
I_RM
I_PP
αT
V_F
Electrical characteristics (T_amb = 25 °C)
Parameter
Stand-off voltage
Breakdown voltage
Clamping voltage
Leakage current
VCL VBR
VRM
Peak pulse current
Voltage temperature coefficient
Forward voltage drop
I
IF
VF
I _RM
I _PP
Figure 1. Pulse definition for electrical characterisitcs
Unit
W
°C
°C
°C
°C
Unit
°C/W
°C/W
V
Repetitive pulse current
tr = rise time (µs)
tp = pulse duration time (µs)
tr
tp
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