SGSD100_08 Datasheet, PDF (4/10 Pages) STMicroelectronics – Complementary power Darlington transistors

Electrical characteristics
SGSD100 SGSD200
Symbol
Parameter
Test conditions
Min.
E_s/b
Second breakdown energy
V_CC = 30 V L = 3 mH
250
V_CC = 30 V L = 3 mH T_C = 100 ^oC ²⁵⁰
I_s/b Second breakdown current V_CE = 25 V t = 500 ms
6
1. Pulsed : Pulse duration = 300 µs, duty cycle ≤1.5%
Note:
For PNP type voltage and current values are negative
Typ.
Max. Unit
mJ
mJ
A
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