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SGSD100_08 Datasheet, PDF (3/10 Pages) STMicroelectronics – Complementary power Darlington transistors
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SGSD100 SGSD200
2 Electrical characteristics
Electrical characteristics
(Tcase = 25 °C; unless otherwise specified)
Table 4. Electrical characteristics
Symbol
Parameter
Test conditions
Min.
ICBO
Collector cut-off current
(IE = 0)
Collector cut-off current
ICEV
(VBE = -0.3V)
ICEO
Collector cut-off current
(IB = 0)
IEBO
Emitter cut-off current
(IC = 0)
VCEO(sus)(1)
Collector-emitter
voltage (IB = 0)
sustaining
VCE(sat)(1)
Collector-emitter saturation
voltage
VBE(sat)(1)
Base-emitter saturation
voltage
VBE(1) Base-emitter voltage
hFE(1) DC current gain
VF(1) Diode forward voltage
VCE = 80 V
VCE = 80 V
VCE = 80 V
VCE = 80 V
VCE = 60 V
VCE = 60 V
VEB = 5 V
TC = 100 oC
TC = 100 oC
TC = 100 oC
IC = 50 mA
80
IC = 5 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 20 A
IC = 20 A
IB = 20 mA
IB = 20 mA TC = 100 oC
IB = 40 mA
IB = 40 mA TC = 100 oC
IB = 80 mA
IB = 80 mA TC = 100 oC
IC = 20 A IB = 80 mA
IC = 20 A IB = 80 mA TC = 100 oC
IC = 10 A VCE = 3 V
1
IC = 10 A VCE = 3 V TC = 100 oC
IC = 5 A VCE = 3 V
600
IC = 5 A VCE = 3 V TC = 100 oC
IC = 10 A VCE = 3 V
500
IC = 10 A VCE = 3 V TC = 100 oC
IC = 20 A VCE = 3 V
300
IC = 20 A VCE = 3 V TC = 100 oC
IF = 5 A
IF = 5 A
IF = 10 A
IF = 10 A
IF = 20 A
IF = 20 A
TC = 100 oC
TC = 100 oC
TC = 100 oC
Typ. Max. Unit
0.5 mA
1.5 mA
0.1 mA
2
mA
0.5 mA
1.5 mA
2
mA
V
0.95 1.2
V
0.8
V
1.2 1.75 V
1.3
V
2
3.5
V
2.3
V
2.6
3.3
V
2.5
V
1.8
3
V
1.6
V
5000
8000
4000
8000
2000
2000
15000
12000
6000
1.2
V
0.85
V
1.6
V
1.4
V
2.3
V
1.3
V
3/10
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