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SD2931-11 Datasheet, PDF (4/18 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs
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Electrical specification
2
Electrical specification
SD2931-11
(TCASE = 25 °C).
Table 4. Static
Symbol
Test conditions
V(BR)DSS VGS = 0 V
IDS = 100 mA
IDSS
VGS = 0 V
VDS = 50 V
IGSS
VGS(Q)(1)
VGS = 20 V
VDS = 10 V
VDS = 0 V
ID = 250 mA
VDS(ON) VGS = 10 V
ID = 10 A
GFS* VDS = 10 V
ID = 5 A
CISS VGS = 0 V
VDS = 50 V
f = 1 MHz
COSS VGS = 0 V
VDS = 50 V
f = 1 MHz
CRSS VGS = 0 V
VDS = 50 V
f = 1 MHz
1. VGS(Q) and GFS sorted with alpha/numeric code marked on unit.
Min. Typ. Max. Unit
125
V
50 µA
250 nA
see table below
V
3.0 V
see table below mho
480
pF
190
pF
18
pF
Table 5. Dynamic
Symbol
Test conditions
Min. Typ. Max. Unit
POUT VDD = 50 V IDQ = 250 mA
f = 175 MHz 150
GPS VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 14
15
hD
VDD = 50 V IDQ = 250 mA POUT = 150 W f = 175 MHz 55 65
Load
Mismatch
VDD = 50 V IDQ = 250 mA POUT = 150 W
all phase angles
f = 175 MHz
10:1
W
dB
%
VSW
R
4/18
Doc ID 17329 Rev 1
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