SD2931-11 Datasheet, PDF (1/18 Pages) STMicroelectronics – RF power transistors HF/VHF/UHF N-channel MOSFETs

SD2931-11
RF power transistors
HF/VHF/UHF N-channel MOSFETs
Features
■ Gold metallization
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 150 W min. with 14 dB gain @ 175
MHz
■ Thermally enhanced packaging for lower
junction temperatures
■ G_FS and V_GS sort marked on unit
Description
The SD2931-11 is a gold metallized N-channel
MOS field-effect RF power transistor. Being
electrically identical to the standard SD2931
MOSFET, it is intended for use in 50 V dc large
signal applications up to 230 MHz.
The SD2931-11 is mechanical compatible to the
SD2931 but offers in addition a better thermal
capability (25% lower thermal resistance),
representing the best-in-class transistors for ISM
applications, where reliability and ruggedness are
critical factors.
M174
epoxy sealed
Figure 1. Pin connection
4
1
3
1. Drain
2. Source
2
3. Gate
4. Source
Table 1. Device summary
Order code
SD2931-11
Marking
SD2931-11
Package
M174 epoxy sealed
Packing
Tray
March 2010
Doc ID 17329 Rev 1
1/18
www.st.com
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