SCT50N120 Datasheet, PDF (4/11 Pages) STMicroelectronics – High voltage DC-DC converters

Electrical characteristics
SCT50N120
2
4/11
Electrical characteristics
(TCASE = 25 °C unless otherwise specified).
Table 4: On/off states
Symbol
Parameter
Test conditions
Zero gate voltage
IDSS
drain current
Gate-body leakage
IGSS
current
VDS = 1200 V, VGS = 0 V
VDS = 1200 V, VGS = 0 V,
TJ = 200 °C
VDS = 0 V, VGS = -10 to 22 V
VGS(th) Gate threshold voltage
Static drain-source
RDS(on) _{on-resistance}
VDS = VGS, ID = 1 mA
VGS = 20 V, ID = 40 A
VGS = 20 V, ID = 40 A,
TJ = 150 °C
VGS = 20 V, ID = 40 A,
TJ = 200 °C
Min. Typ. Max. Unit
1 100 µA
10
µA
±100 nA
1.8 3.0
V
52 69 mΩ
59
mΩ
70
mΩ
Symbol
Ciss
Coss
Crss
Qg
Qgs
Qgd
Rg
Parameter
Input capacitance
Output capacitance
Reverse transfer
capacitance
Total gate charge
Gate-source charge
Gate-drain charge
Gate input resistance
Table 5: Dynamic
Test conditions
VDS = 400 V, f = 1 MHz,
VGS = 0 V
VDD = 800 V, ID = 40 A,
VGS = 0 to 20 V
f=1 MHz open drain
Min. Typ. Max. Unit
- 1900 -
pF
- 170
-
pF
-
30
-
pF
-
122
-
nC
-
19
-
nC
-
35
-
nC
-
1.9
-
Ω
Symbol
Eon
Eoff
Eon
Eoff
Table 6: Switching energy (inductive load)
Parameter
Test conditions
Min.
Turn-on switching energy _{VDD = 800 V, ID = 40 A}
-
Turn-off switching energy ^RG^{= 2.2 Ω, V}GS ^{= -5 to 20 V}
-
Turn-on switching energy VDD = 800 V, ID = 40 A
-
RG= 2.2 Ω, VGS = -5 to 20 V
Turn-off switching energy _{TJ= 150 °C}
-
Typ.
530
310
670
334
Max.
-
-
-
-
Unit
µJ
µJ
µJ
µJ
Symbol
VSD
trr
Qrr
IRRM
Table 7: Reverse SiC diode characteristics
Parameter
Test conditions
Min
Diode forward voltage
IF = 20 A, VGS = 0 V
-
Reverse recovery time
-
Reverse recovery charge
IF = 40 A, di/dt = 2000/ns
-
VDD = 800 V
Reverse recovery current
-
Typ.
3.5
55
230
14
Max
-
-
-
Unit
V
ns
nC
A
DocID027989 Rev 4