SCT50N120 Datasheet, PDF (1/11 Pages) STMicroelectronics – High voltage DC-DC converters

SCT50N120
Silicon carbide Power MOSFET 1200 V, 65 A,
59 mΩ (typ., TJ=150 °C) in an HiP247™ package
Datasheet - production data
Features
 Very tight variation of on-resistance vs.
temperature
 Very high operating junction temperature
capability (TJ = 200 °C)
 Very fast and robust intrinsic body diode
 Low capacitance
Applications
Figure 1: Internal schematic diagram
 Solar inverters, UPS
 Motor drives
 High voltage DC-DC converters
 Switch mode power supplies
D(2, TAB)
G(1)
S(3)
AM01475v1_noZen
Description
This silicon carbide Power MOSFET is produced
exploiting the advanced, innovative properties of
wide bandgap materials. This results in
unsurpassed on-resistance per unit area and
very good switching performance almost
independent of temperature. The outstanding
thermal properties of the SiC material allows
designers to use an industry-standard outline
with significantly improved thermal capability.
These features render the device perfectly
suitable for high-efficiency and high power
density applications.
Table 1: Device summary
Order code
Marking
Package
Packaging
SCT50N120
SCT50N120
HiP247™
Tube
April 2017
DocID027989 Rev 4
This is information on a product in full production.
1/11
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