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PD85006L-E Datasheet, PDF (4/17 Pages) STMicroelectronics – RF power transistor the LdmoST plastic family
Electrical characteristics
2
Electrical characteristics
PD85006L-E
2.1
TCASE = +25 oC
Static
Table 4. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
CISS
COSS
CRSS
VGS = 0 V
VGS = 5 V
VDS = 13.6 V
VGS = 10 V
VGS = 0 V
VGS = 0 V
VGS = 0 V
Test conditions
VDS = 25 V
VDS = 0 V
ID = 200 mA
ID = 0.25 A
VDS = 13.6 V
VDS = 13.6 V
VDS = 13.6 V
Min Typ Max Unit
1 µA
1 µA
4
V
0.27
V
f = 1 MHz
16
pF
f = 1 MHz
14
pF
f = 1 MHz
1.1
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
POUT VDD = 13.6 V, IDQ = 200 mA, PIN = 0.1 W, f = 870 MHz
GPS VDD = 13.6 V, IDQ = 200 mA, POUT = 5 W, f = 870 MHz
ND
VDD = 13.6 V, IDQ = 200 mA, POUT = 5 W, f = 870 MHz
Load VDD = 13.6 V, IDQ = 200 mA, POUT = 5 W, f = 870 MHz
mismatch All phase angles
Min Typ Max Unit
5
6
W
15 17
dB
55 63
%
20:1
VSWR
2.3
ESD protection characteristics
Table 6.
ESD protection characteristics
Test conditions
Human body model
Machine model
Class
2
M3
2.4
Moisture sensitivity level
Table 7.
Moisture sensitivity level
Test methodology
J-STD-020B
4/17
Rating
MSL 3