PD85006L-E Datasheet, PDF (1/17 Pages) STMicroelectronics – RF power transistor the LdmoST plastic family

PD85006L-E
RF power transistor
the LdmoST plastic family
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 6 W with 15 dB gain @ 870 MHz /
13.6 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
Description
The PD85006L-E is a common source
N-channel, enhancement-mode lateral Field-
Effect RF power transistor. It is designed for high
gain, broadband commercial and industrial
applications. It operates at 13.6 V in common
source mode at frequencies of up to 1 GHz.
PD85006L-E boasts the excellent gain, linearity
and reliability of ST’s latest LDMOS technology
mounted in leadless SMD plastic RF power
package , PowerFLAT™. PD85006L-E’s superior
linearity performance makes it an ideal solution
for mobile radio applications.
PowerFLAT™ (5mm x 5mm)
Figure 1. Pin connection
Table 1. Device summary
Order code
PD85006L-E
Marking
85006
Package
PowerFLAT^™
Packaging
Tape and reel
December 2007
Rev 1
1/17
www.st.com
17