PD84008L-E Datasheet, PDF(4/14 Page) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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PD84008L-E Datasheet, PDF (4/14 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

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Electrical characteristics

PD84008L-E

2.1

TCASE = +25 oC

Static

Table 4.

Symbol

IDSS

IGSS

VGS(Q)

VDS(ON)

CISS

COSS

CRSS

Static

VGS = 0 V

VGS = 5 V

VDS = 10 V

VGS = 10 V

VGS = 0 V

Test conditions

VDS = 25 V

VDS = 0 V

ID = 250mA

ID = 1 A

VDS = 7 V

f = 1 MHz

Min Typ Max Unit

1 ÂµA

0.27 0.31 V

2.2

Dynamic

Table 5. Dynamic

Symbol

Test conditions

P3dB

Load

mismatch

VDD = 7.5 V, IDQ = 250 mA

f = 870 MHz

VDD = 7.5 V, IDQ = 250 mA, POUT = 2 W, f = 870 MHz

VDD = 7.5 V, IDQ = 250 mA, POUT = P3dB, f = 870 MHz

VDD = 9.5 V, IDQ = 250 mA, POUT = 10 W, f = 870 MHz

All phase angles

Min Typ Max Unit

13 15.5

50 57

20:1

VSWR

2.3

ESD protection characteristics

Table 6.

ESD protection characteristics

Test conditions

Human body model

Machine model

Class

2.4

Moisture sensitivity level

Table 7.

Moisture sensitivity level

Test methodology

J-STD-020B

Rating

MSL 3

4/14

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