PD84008L-E Datasheet, PDF (1/14 Pages) STMicroelectronics – RF power transistor, LdmoST plastic family N-channel enhancement-mode lateral MOSFETs

PD84008L-E
RF power transistor, LdmoST plastic family
N-channel enhancement-mode lateral MOSFETs
Preliminary Data
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 8 W with 13 dB gain @ 870 MHz / 7.5 V
■ Plastic package
■ ESD protection
■ In compliance with the 2002/95/EC european
directive
PowerFLAT^TM (5 mm x 5 mm)
Description
The is a common source N-channel,
enhancement-mode lateral Field-Effect RF power
transistor. It is designed for high gain, broadband
commercial and industrial applications. It
operates at 7.5 V in common source mode at
frequencies of up to 1 GHz. boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in leadless SMD plastic RF
power package , PowerFLAT™.
Figure 1. Pin connection
Table 1. Device summary
Order code
PD84008L-E
Marking
84008
Package
PowerFLAT^TM
Packing
Tape and reel
March 2008
Rev 2
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to
change without notice.
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