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PD57030-E_10 Datasheet, PDF (4/18 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs
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Electrical characteristics
2
Electrical characteristics
PD57030-E, PD57030S-E
2.1
TCASE = +25 oC
Static
Table 4. Static
Symbol
V(BR)DSS
IDSS
IGSS
VGS(Q)
VDS(ON)
gFS
CISS
COSS
CRSS
VGS = 0
VGS = 0
VGS = 20 V
VDS = 28 V
VGS = 10 V
VDS = 10 V
VGS = 0
VGS = 0
VGS = 0
Test conditions
IDS = 10mA
VDS = 28 V
VDS = 0
ID = 50 mA
ID = 3 A
ID = 3 A
VDS = 28 V
VDS = 28 V
VDS = 28V
f = 1 MHz
f = 1 MHz
f = 1 MHz
Min Typ Max Unit
65
V
1 µA
1 µA
2.0
5.0 V
1.3
V
1.8
mho
57
pF
30
pF
2.3
pF
2.2
Dynamic
Table 5. Dynamic
Symbol
Test conditions
Min Typ Max Unit
POUT VDS = 28 V IDQ = 50 mA
f = 945 MHz 30
GP
VDS = 28 V IDQ = 50 mA POUT = 30 W f = 945 MHz 13 14
ηD
VDS = 28 V IDQ = 50 mA POUT = 30 W f = 945 MHz 45
53
Load VDS = 28 V IDQ = 50 mA POUT = 30 W f = 945 MHz 10:1
mismatch all phase angles
W
dB
%
VSWR
2.3
Moisture sensitivity level
Table 6.
Moisture sensitivity level
Test methodology
J-STD-020B
Rating
MSL 3
4/18
Doc ID 12613 Rev 2
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