PD57030-E_10 Datasheet, PDF (1/18 Pages) STMicroelectronics – RF POWER transistor, LdmoST plastic family N-channel enhancement-mode, lateral MOSFETs

PD57030-E
PD57030S-E
RF POWER transistor, LdmoST plastic family
N-channel enhancement-mode, lateral MOSFETs
Features
■ Excellent thermal stability
■ Common source configuration
■ P_OUT = 30 W with 14dB gain @ 945 MHz / 28 V
■ New RF plastic package
Description
The device is a common source N-channel,
enhancement-mode lateral field-effect RF power
transistor. It is designed for high gain, broad band
commercial and industrial applications. It operates
at 28 V in common source mode at frequencies
up to 1 GHz. The device boasts the excellent
gain, linearity and reliability of ST’s latest LDMOS
technology mounted in the first true SMD plastic
RF power package, PowerSO-10RF. Device’s
superior linearity performance makes it an ideal
solution for base station applications. The
PowerSO-10 plastic package, designed to offer
high reliability, is the first ST JEDEC approved,
high power SMD package. It has been specially
optimized for RF needs and offers excellent RF
performance and ease of assembly. Mounting
recommendations are available in www.st.com/rf/
(look for application note AN1294)
PowerSO-10RF
(formed lead)
PowerSO-10RF
(straight lead)
Figure 1. Pin connection
Source
Gate
Drain
Table 1. Device summary
Order code
PD57030-E
PD57030S-E
PD57030TR-E
PD57030STR-E
Package
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
PowerSO-10RF (formed lead)
PowerSO-10RF (straight lead)
May 2010
Doc ID 12613 Rev 2
Packing
Tube
Tube
Tape and reel
Tape and reel
1/18
www.st.com
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