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PD55025-E Datasheet, PDF (4/22 Pages) STMicroelectronics – RF POWER transistor, LDMOST plastic family N-Channel enhancement-mode lateral MOSFETs
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Electrical Characteristics
2
Electrical Characteristics
PD55025-E, PD55025S-E
2.1
TCASE = +25 oC
Static
Table 3. Static
Symbol
IDSS
IGSS
VGS(Q)
VDS(ON)
GFS
CISS
COSS
CRSS
VGS = 0V
VGS = 20V
VDS = 28V
VGS = 10V
VDS = 10V
VGS = 0V
VGS = 0V
VGS = 0V
Test conditions
VDS = 28V
VDS = 0V
ID = 100mA
ID = 3A
ID = 3A
VDS = 12.5V
VDS = 12.5V
VDS = 12.5V
f = 1MHz
f = 1MHz
f = 1MHz
Min. Typ. Max. Unit
1 µA
1 µA
2.0
5.0 V
0.7 0.8 V
2.5
mho
86
pF
76
pF
5.8
pF
2.2
Dynamic
Table 4. Dynamic
Symbol
Test conditions
POUT VDD = 12.5V, IDQ = 200mA
f = 500MHz
GP
VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz
hD
VDD = 12.5V, IDQ = 200mA, POUT = 25W, f = 500MHz
Load VDD = 15.5V, IDQ = 200mA, POUT = 25W, f = 500MHz
mismatch All phase angles
Min. Typ. Max. Unit
25
W
14.5
dB
50
%
20:1
VSWR
4/22
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